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| SMD Type MOS Field Effect Transistor 2SK3113 IC MOSFET Features Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A) +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm Low gate charge +0.15 5.55-0.15 +0.2 9.70-0.2 +0.1 0.80-0.1 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Avalanche capability ratings +0.15 0.50-0.15 Gate voltage rating 30 V 0.127 max 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 600 30 2.0 8.0 20 1.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf ID=1.0A,VGS(on)=10V,VDD=150V,RG=10 ,RL=10 VDS=10V,VGS=0,f=1MHZ Testconditons VDS=600V,VGS=0 VGS= 30V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=1.0A VGS=10V,ID=1.0A 2.5 0.5 3.3 260 60 5 7 2 22 9 4.4 pF pF pF ns ns ns ns Min Typ Max 100 10 3.5 Unit A A V S 3.80 QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) www.kexin.com.cn 1 |
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